Self-organization in porous silicon formation

Autor:	Vijay A. Singh, George C. John
Rok vydání:	1997
Předmět:	Materials science Nanoporous Surface roughness Nucleation Surface finish Composite material Porosity Porous medium Porous silicon Layer (electronics) Physics::Geophysics
Zdroj:	Physical Review B. 56:4638-4641
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.56.4638
Popis:	We investigate the diffusion-induced nucleation model for the formation of porous silicon. We show that simulations based on this model can explain experimental features such as (i) a constant porosity profile, (ii) a planar film front, and (iii) the effect of the surface roughness on the porosity profile. We show that for a critical roughness the surface nanoporous layer disappears. Further, these simulations highlight aspects of self-organization in the pore formation process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69018f54b7ec6dd1aee74f8276066a63 https://doi.org/10.1103/physrevb.56.4638 Zobrazit plný text záznamu