Investigation of charge carrier injection in silicon nitride/silicon junctions

Autor:	M. Kunst, J. R. Elmiger
Rok vydání:	1996
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Nanocrystalline silicon chemistry.chemical_element Strained silicon Nitride chemistry.chemical_compound chemistry Silicon nitride Optoelectronics Charge carrier LOCOS business
Zdroj:	Applied Physics Letters. 69:517-519
ISSN:	1077-3118 0003-6951
Popis:	Contactless measurements of the conductance of silicon wafers with silicon nitride top layers are presented. The deposition of silicon nitride layers leads to an increase of the conductance, both for p‐Si and n‐Si. This is attributed to the increase of the number of electrons in the Si wafer, in an inversion layer in p‐Si, and in an accumulation layer in n‐Si. Comparison of the increase of the conductance with the fixed charge density in the nitride layer points to a strongly reduced electron mobility in these layers. It is shown that the change of the conductance increases with growing thickness of the nitride layer up to a thickness of 20 nm, whereafter a constant value is attained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68fd552324f6413aeb65a89cc745473e https://doi.org/10.1063/1.117772 Zobrazit plný text záznamu