Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments
| Autor: | Jenn-Gwo Hwu, Jim-Shone Chen |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Mos capacitor
Materials science Silicon Annealing (metallurgy) Silicon dioxide Analytical chemistry chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention Capacitor chemistry.chemical_compound chemistry law Electronic engineering Irradiation Electrical and Electronic Engineering Cobalt-60 Hot electron |
| Zdroj: | IEEE Electron Device Letters. 11:82-84 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Improvement of the SiO/sub 2//Si interface degradation due to hot-electron injections from silicon by repeated irradiation-then-anneal treatments is described. Each treatment includes an irradiation of Co-60 with a total dose of 10/sup 6/ rd (SiO/sub 2/) and an anneal in N/sub 2/ for 10 min successively. It is found that the sensitivity to hot-electron induced damage decreases gradually as the number of irradiation-then-anneal treatments increases. After three such treatments, the MOS capacitor shows excellent behavior in terms of its hardness to hot-electron-induced degradation. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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