Compact process model of temperature dependent amorphization induced by ion implantation

Autor:	Keun-Ho Lee, Tai-Kyung Kim, Moon-Hyun Yoo, Inkook Jang, Young-Kwan Park, Alexander Schmidt, Chilhee Chung
Rok vydání:	2010
Předmět:	Range (particle radiation) Materials science Silicon Quantitative Biology::Tissues and Organs Physics::Medical Physics Monte Carlo method chemistry.chemical_element Germanium Molecular physics Amorphous solid Crystallography Ion implantation chemistry Kinetic Monte Carlo Layer (electronics)
Zdroj:	2010 International Conference on Simulation of Semiconductor Processes and Devices.
Popis:	A compact process model of the thickness of amorphous layer generated by high dose ion implantation was developed. The model takes into account implantation temperature that has strong effect on the damage accumulation and amorphization dynamics. The model is based on the results of Kinetic Monte Carlo simulation of implantation process and provides means for fast and precise calculation of amorphous layer thickness created by most common species used in semiconductor technology, with a wide range of implantation energies, doses and temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68f77a601fba7e101e9254afce9a725a https://doi.org/10.1109/sispad.2010.5604529 Zobrazit plný text záznamu