| Autor: |
Kwang-Sik Ko, Jina Eum, Jaehee Lee, Sanghyun Lee, Joo Won Park, Kuemju Lee |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 73rd Annual Device Research Conference (DRC). |
| DOI: |
10.1109/drc.2015.7175584 |
| Popis: |
We could obtain new structure high-side LDMOS with Ron.sp=249mohm*mm2, BVdss=115V by optimizing doping concentration of p+ buried layer located under n-type drift layer and introducing floating poly on STI. And we could also propose 60V fully isolated LDMOS with 51.2mohm*mm2, BVdss of 64V and BVceo of 55V using the same process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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