| Autor: |
Yasushi Ohkubo, Shiho Sasaki, Satoshi Yusa, Masao Ushida, Naoya Hayashi, Hideaki Mitsui, Yuki Shiota, Toshiyuki Suzuki, Toshiharu Nishimura, Osamu Nozawa, Hiroshi Mohri, Kenji Noguchi |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.504047 |
| Popis: |
A new att-PSM shifter for both F 2 and high-transmittance ArF lithography was developed. This shifter consists of SiON / TaHf in stacked layers. SiON for phase shift layer has a moderate transmittance and refractive index, and has sufficient laser durability. The TaHf film, which is a transmittance control layer, was effective as a functional layer in mask dry etching. Adopting the 3 step etching procedure, low damage of the quartz surface and less impact to CD shift was realized. It was confirmed that a new shifter has also sufficient feasibility to the mask inspection and repair process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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