| Autor: |
I. Gyuro, D. Kaiser, H. Grosskopf, J.-H. Reemtsma, W. Kuebart, U. Koerner |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. |
| DOI: |
10.1109/iciprm.1992.235619 |
| Popis: |
The authors investigate the influence of the layer sequence on transconductance, leakage current, gate-source capacitance, and current gain cut-off frequency and the optimization of InAlAs/InGaAs HEMTs (high electron mobility transistors) for application in optoelectronic receivers. A medium sheet concentration range around 3.0 to 3.5*10/sup 12/ cm/sup -2/ seems to be a good compromise between high-frequency behavior, system sensitivity, and technical aspects for 1- mu m gate length HEMTs. In that range one observes no strong dependence of the leakage current, transit frequency, and gate-source capacitance on the carrier sheet concentration. Further lowering of the doping level and/or a simultaneous increase in doping layer thickness is problematic since the gate to channel distance has to be increased and the contribution of the doping layer to the 2-D electron gas (2DEG) becomes less effective. On the other hand the processing of a wafer with lower doping levels is less critical with respect to the gate recess control. The thermal stability of these layers will be improved also. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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