Crystallographic wing tilt in laterally overgrown GaN

Autor:	C Roder, H. Heinke, James S. Speck, Detlef Hommel, Steven P. DenBaars, Thomas M. Katona
Rok vydání:	2003
Předmět:	Diffraction Wing Cantilever Materials science Acoustics and Ultrasonics Gallium nitride Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound Tilt (optics) chemistry Thin film Order of magnitude
Zdroj:	Journal of Physics D: Applied Physics. 36:A188-A191
ISSN:	1361-6463 0022-3727
Popis:	Thin uncoalesced gallium nitride (GaN) layers grown on Si(111) by maskless cantilever epitaxy (CE) have been investigated using high resolution x-ray diffraction at variable temperatures. The crystallographic tilt of the free-hanging wings relative to the stripe regions of the samples was determined for different temperatures. With increased temperature the wing tilt decreased non-linearly and seemed to approach a constant value at higher temperatures. The wing tilts of two samples differing at room temperature by one order of magnitude were found to vary by less than 20% between 300 and 1020 K. This suggests that the main part of the crystallographic wing tilt is not thermally induced for samples grown with the CE technique.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68d8e02f154a2a99b0dce4b919e3c0cd https://doi.org/10.1088/0022-3727/36/10a/338 Zobrazit plný text záznamu