Crystallographic wing tilt in laterally overgrown GaN
Autor: | C Roder, H. Heinke, James S. Speck, Detlef Hommel, Steven P. DenBaars, Thomas M. Katona |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | Journal of Physics D: Applied Physics. 36:A188-A191 |
ISSN: | 1361-6463 0022-3727 |
Popis: | Thin uncoalesced gallium nitride (GaN) layers grown on Si(111) by maskless cantilever epitaxy (CE) have been investigated using high resolution x-ray diffraction at variable temperatures. The crystallographic tilt of the free-hanging wings relative to the stripe regions of the samples was determined for different temperatures. With increased temperature the wing tilt decreased non-linearly and seemed to approach a constant value at higher temperatures. The wing tilts of two samples differing at room temperature by one order of magnitude were found to vary by less than 20% between 300 and 1020 K. This suggests that the main part of the crystallographic wing tilt is not thermally induced for samples grown with the CE technique. |
Databáze: | OpenAIRE |
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