Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
| Autor: | Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Nucleation chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Engineering physics law.invention Solid-state lighting Semiconductor chemistry law 0103 physical sciences Microelectronics General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology business |
| Zdroj: | Progress in Crystal Growth and Characterization of Materials. 64:103-132 |
| ISSN: | 0960-8974 |
| Popis: | The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial layer growth. Simultaneously, MOVPE itself took off in its triumphal course in solid state lighting production demonstrating its power as industrially relevant growth technique. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of in situ, in system and ex situ characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices. |
| Databáze: | OpenAIRE |
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