Effects of Wafer Cleaning on the Interconnect Structure and Its Electrical Properties during the Al Dual Damascene Process for the Fabrication of Sub-100 nm Memory Devices

Autor:	Chang-Koo Kim, Hyun-Kyu Ryu, Yil-Wook Kim, Chee Burm Shin
Rok vydání:	2005
Předmět:	Interconnection Dynamic random-access memory Fabrication Materials science business.industry General Chemical Engineering Copper interconnect Wet cleaning General Chemistry Dielectric Aspect ratio (image) law.invention law Electronic engineering Optoelectronics Wafer business
Zdroj:	JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 38:922-928
ISSN:	1881-1299 0021-9592
DOI:	10.1252/jcej.38.922
Popis:	An Al dual damascene process for the metallization of sub-100 nm dynamic random access memory devices was performed, and the effects of wafer cleaning method on the damascene structures and their electrical properties were investigated. Interconnect structures obtained with the Al dual damascene process using the conventional NH4OH-based wet cleaning (Type I) and the wet cleaning followed by CF4/Ar-plasma dry cleaning (Type II) showed that the metal lines having the aspect ratio of 3 were patterned without gap-filling of inter metal dielectrics. All the sheet resistances of metal lines using the two different wafer cleaning methods during the Al dual damascene process were within specification. The via resistance distributions, however, depended on the cleaning method, and it was found that the cleaning Type II produced a 100% yield and very narrow distribution of the contact resistances of the 0.24 μm-diameter via due to the efficient removal of stable AlxOy species for cleaning Type II.
Databáze:	OpenAIRE
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