Characteristics silicon pressure sensor using dry etching technology

Autor:	Young-Tae Lee, Dong-Kyun Woo, Ho-Cheol Suh, Kyung-il Lee, Heung-Rak Kim
Rok vydání:	2010
Předmět:	Materials science Silicon business.industry Analytical chemistry Silicon on insulator chemistry.chemical_element Pressure sensor chemistry Optoelectronics Wafer Dry etching Reactive-ion etching business Piezoresistive pressure sensors
Zdroj:	Journal of Sensor Science and Technology. 19:137-141
ISSN:	1225-5475
DOI:	10.5369/jsst.2010.19.2.137
Popis:	In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/VkPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68a58eb348b920a301a42b321a1b310f https://doi.org/10.5369/jsst.2010.19.2.137 Zobrazit plný text záznamu