GeTe 4 as a Candidate for Phase Change Memory Application

Autor:	Zhiguo Liu, Gang Bai, Jiang Yin, Yidong Xia, Xuexin Lan, S. L. Tang, Run Li, Qiaonan Yin
Rok vydání:	2013
Předmět:	Dynamic switching Materials science business.industry Pulse (signal processing) General Physics and Astronomy Nanotechnology Activation energy Sputter deposition Focused ion beam Phase-change memory Switching time Thermal Optoelectronics business
Zdroj:	Chinese Physics Letters. 30:058101
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/30/5/058101
Popis:	GeTe4 films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge2Sb2Te5, the GeTe4 film exhibits a higher crystallization temperature (235°C), better data retention of ten years at 129°C, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1 × 104.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68a3dc6941498609e27ecf0e79bda608 https://doi.org/10.1088/0256-307x/30/5/058101 Zobrazit plný text záznamu