A 14–31 GHz 1.25 dB NF enhancement mode GaAs pHEMT low noise amplifier
| Autor: | Binh L. Pham, Thanh Pham, Anh-Vu Pham, Duy P. Nguyen |
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| Rok vydání: | 2017 |
| Předmět: |
Third-order intercept point
Materials science business.industry 020208 electrical & electronic engineering dBm Bandwidth (signal processing) Electrical engineering 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Low-noise amplifier Gallium arsenide chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Wideband business Monolithic microwave integrated circuit |
| Zdroj: | 2017 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2017.8059048 |
| Popis: | In this paper, we report a wide bandwidth low noise amplifier (LNA) fabricated in a 0.15 μm enhancement mode (Emode) gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The lna employs source degeneration along with a resistive feedback network to achieve low noise figure (NF) over a wide bandwidth. Experimental results show that the LNA exhibits a maximum gain of 30 dB and maintains higher than 25 dB from 14 to 31 GHz. The measured minimum NF is 1.25 dB along with 17.5 dBm output 1-dB compression point (OP1dB) and 28.5 dBm output 3rd order intercept point (OIP3). |
| Databáze: | OpenAIRE |
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