Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

Autor:	Tomohiro Ohashi, Hiroshi Tabata, Osamu Kubo, Mitsuhiro Katayama, Shouta Okasaka, Daiki Tamba
Rok vydání:	2015
Předmět:	Materials science Scattering Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Ion Azimuth Crystallinity Crystallography Materials Chemistry Coaxial Spectroscopy Intensity (heat transfer)
Zdroj:	Surface Science. 635:115-122
ISSN:	0039-6028
DOI:	10.1016/j.susc.2015.01.007
Popis:	Geometry and surface structure of a BaSi 2 (100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi 2 (100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi 2 (100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi 2 (100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi 2 (100) film grown on Si(111) is terminated by Si tetrahedra.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::689e740b6f63b38363bf5f5e46621cb6 https://doi.org/10.1016/j.susc.2015.01.007 Zobrazit plný text záznamu Full Text from ScienceDirect