Effective control of TEOS–PECVD thin film depositions
| Autor: | Florian Pistritu, Edwin Alexandru Laszlo, Ciprian Iliescu, Mihaela Carp, Violeta Dediu |
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| Rok vydání: | 2020 |
| Předmět: |
0301 basic medicine
Microelectromechanical systems Materials science Silicon business.industry chemistry.chemical_element Substrate (electronics) Chamber pressure 03 medical and health sciences 030104 developmental biology 0302 clinical medicine chemistry Residual stress Plasma-enhanced chemical vapor deposition Optoelectronics Thin film business 030217 neurology & neurosurgery Deposition (law) |
| Zdroj: | 2020 International Semiconductor Conference (CAS). |
| Popis: | Deposition parameters of tetraethylorthosilicate (TEOS) layers on silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) method were investigated We design the experiment taking into consideration chamber pressure, substrate temperature, RF Power and mass flow rate (oxygen and TEOS) to asses their influence on deposition rate, film uniformity, refractive index uniformity and film stress. All the results were evaluated for applications that require low temperature processing in order to avoid damage of Microelectromechanical Systems (MEMS) devices. |
| Databáze: | OpenAIRE |
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