Densities and Surface Reaction Probabilities of Oxygen and Nitrogen Atoms During Sputter Deposition of ZnInON on ZnO
| Autor: | Keigo Takeda, Tomoaki Ide, Kazunori Koga, Daisuke Yamashita, Naho Itagaki, Hyunwoong Seo, Koichi Matsushima, Masaru Hori, Masaharu Shiratani |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Absorption spectroscopy Analytical chemistry chemistry.chemical_element 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Nitrogen Oxygen Volumetric flow rate chemistry Sputtering 0103 physical sciences 0210 nano-technology Chemical composition Stoichiometry |
| Zdroj: | IEEE Transactions on Plasma Science. 45:323-327 |
| ISSN: | 1939-9375 0093-3813 |
| DOI: | 10.1109/tps.2016.2632124 |
| Popis: | We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of $4.5 \times 10^{11}$ cm−3 irrespective of O2 gas flow rate, whereas N density increases sharply from $2.7 \times 10^{11}$ cm−3 for O2 gas sccm to $7.7 \times 10^{11}$ cm−3 for 0.6 sccm and it increases gradually $10^{11}$ cm−3 for 5 sccm. The surface reaction probability $\beta _{O}$ of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O2 gas flow rate from 0 to 5 sccm, whereas $\beta _{N}$ of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at $\beta _{O}=0.404$ of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films. |
| Databáze: | OpenAIRE |
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