Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier
| Autor: | Robert P. H. Chang, J.L. Zilko, V. D. Mattera, R.C. Miller, G.P. Vella-Coleiro, C.L. Cheng, K.F. Brown-Goebeler, S.M.Z. Parker, B. Tell, B.L. Kasper, Y. Ota |
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| Rok vydání: | 1988 |
| Předmět: |
Materials science
Preamplifier business.industry Amplifier Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Bit error rate Optoelectronics Electrical and Electronic Engineering Photolithography Gain stage business Sensitivity (electronics) Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 35:1439-1444 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.2576 |
| Popis: | Monolithically integrated InGaAs p-i-n amplifiers have been successfully fabricated. The structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFETs, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminium phosphorous oxide as gate insulator. At 400 Mb/s, the receiver sensitivity is better than -27 dBm for 1*10/sup -9/ bit error rate. > |
| Databáze: | OpenAIRE |
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