Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range

Autor:	Phuong Nguyen, Alice Boussagol, K. K. Bourdelle, N. Ben Mohamed, Takeshi Akatsu, Ian Cayrefourcq, Eric Guiot, N. Sousbie
Rok vydání:	2005
Předmět:	Materials science Silicon business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Microstructure Amorphous solid Crystal Ion implantation chemistry Transmission electron microscopy Phenomenological model Optoelectronics business Layer (electronics)
Zdroj:	Journal of Applied Physics. 97:083527
ISSN:	1089-7550 0021-8979
Popis:	We investigate the mechanism of the Si layer transfer in the Smart Cut™ technology for H and He coimplantation in the dose range of (2.5–5)×1016cm−2. Using infrared spectroscopy and cross-section transmission electron microscopy we study the microstructure of defects formed in Si in the as-implanted state. With H preimplant we observe significant enhancement of damage production as compared to the case where He is implanted first. At higher coimplant doses a buried nonuniform amorphouslike layer is formed. The structure of the layer resembles “swiss cheese” with highly damaged but still crystalline pockets embedded into amorphous material. The effect of coimplantation parameters on the thickness and crystal quality of transferred layer is discussed in the framework of a simple phenomenological model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::686f360e6ccfffed69cdc822b18ce802 https://doi.org/10.1063/1.1865318 Zobrazit plný text záznamu