| Autor: |
Yu Xia, Xiao-wei Zou, Stephane Badel, Wen Yang, Xiang-Qiang Zhang, Zanfeng Chen, Liu Yanxiang, Meng Lin, Ma Xiaolong, Wei Wei, Miao Xu, Zeng Qiuling, Waisum Wong, Yong Yu, Paak Sunhom Steve, Wei Zheng |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| Popis: |
The diffusion break (DB) induced layout effect is one of the major culprits for device variability and deteriorators for chip Vmin and Iddq. For the first time, the performance and leakage impacts from varied types of diffusion breaks are quantified at the device and chip critical path levels. The continuous diffusion with gate tie-down stands out as the best choice due to the superior N/P balance and lower variability caused by the layout effect. To implement the continuous diffusion at the advanced FinFET technology node, careful physical design at cell boundary is crucial, which is enabled by EUV to solve the contact via color conflict and by self-aligned gate contact (SAGC) to mitigate the gate to diffusion leakage risk. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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