Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing

Autor:	Yeong-Jia Chen, Yih-Juan Li, Shu-Jenn Yu, Wei-Chou Hsu
Rok vydání:	2004
Předmět:	Electron mobility Materials science business.industry Transconductance Drain-induced barrier lowering chemistry.chemical_compound chemistry Gate oxide Optoelectronics Field-effect transistor business Current density Indium gallium arsenide Voltage
Zdroj:	The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
Popis:	In order to enhance the electron mobility we use step graded channel structure in the heterostructure field effect transistor to reduce Coulomb scattering. The electrons are far away from the AlGaAs/InGaAs interface. We fabricated successfully and obtained high drain current density and large gate voltage swing. For a 1.2/spl times/100 /spl mu/m/sup 2/ gate dimension, the maximum saturation drain current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm along with the gate voltage swing of 1.9V. Additionally, we use four period AlGaAs/GaAs buffer layer so that the variations of threshold voltages are insensitive to temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6865f0c73bbd5693fa5ae7bc52f68ad7 https://doi.org/10.1109/iwjt.2004.1306796 Zobrazit plný text záznamu