PECVD silicon carbide as a chemically resistant material for micromachined transducers
| Autor: | Dave Monk, Bishnu P. Gogoi, C.W. Storment, John Heck, Stan Tsai, Gregory T. A. Kovacs, Nicholas J. Mourlas, Samantha H. Tan, Thomas Kim, Anthony F. Flannery |
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| Rok vydání: | 1998 |
| Předmět: |
Chemical resistance
Materials science business.industry Metals and Alloys Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound Hydrofluoric acid chemistry Etching (microfabrication) Electrical resistivity and conductivity Plasma-enhanced chemical vapor deposition Electronic engineering Silicon carbide Optoelectronics Electrical and Electronic Engineering Thin film business Instrumentation |
| Zdroj: | Sensors and Actuators A: Physical. 70:48-55 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/s0924-4247(98)00111-3 |
| Popis: | Plasma enhanced chemical vapor deposited (PECVD) amorphous hydrogenated silicon carbide is a material with many potential applications for micromachined transducers. Specifically, its resistance to etching in a broad range of media such as sulfuric acid/peroxide, hydrofluoric acid and potassium hydroxide make it an excellent choice for use as an encapsulating material for media compatible transducers. This etch resistance also makes it useful as a masking material for intermediate processing steps. Despite this wet chemical resistance, it can be patterned easily in fluorine-based plasmas. A series of trials were undertaken in an attempt to correlate stress, resistivity and wet etch resistance with the following deposition parameters: pressure, CH4 flow rate, low frequency power, low frequency cycle time, high frequency power, and high frequency cycle time. Work to date has demonstrated a CMOS compatible, insulating thin film with a low stress ( |
| Databáze: | OpenAIRE |
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