Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Autor: Gary Gibson, Bao S. Yeh, Alison Chaiken, Chung-Ching Yang, John Chen, D. D. Lindig, Zuzanna Liliental-Weber, Sharath Subramanian, Jacek Jasinski, Krzysztof Nauka
Rok vydání: 2006
Předmět:
Zdroj: Japanese Journal of Applied Physics. 45:2580-2592
ISSN: 1347-4065
0021-4922
DOI: 10.1143/jjap.45.2580
Popis: We demonstrate a data read-back scheme based on electron-beam induced current in a data storage device that utilizes thermal recording onto a phase-change medium. The phase-change medium is part of a heterojunction diode whose local charge-collection efficiency depends on the crystalline or amorphous state of a bit. Current gains up to 65 at 2 keV electron beam energy have been demonstrated using InSe/GaSe/Si epitaxial diodes. Fifteen write–erase cycles are obtained without loss of signal contrast by using a protective cap layer and short write pulses. 100 write–erase cycles have been achieved with some loss of contrast. Erasure times for the bits are longer than in similar polycrystalline In–Se media films. Possible reasons for the long erasure times are discussed in terms of a nucleation- or growth-dominated recrystallization. Prospects for extension to smaller bit sizes using electron-beam writing are considered.
Databáze: OpenAIRE