Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks

Autor:	J. Nakos, J. Pekarik, Steven H. Voldman, S. Geissler, R. Gauthier
Rok vydání:	2002
Předmět:	Materials science Electrostatic discharge business.industry Electrical engineering chemistry.chemical_element Germanium Integrated circuit design Ion implantation CMOS chemistry Shallow trench isolation MOSFET Optoelectronics business Diode
Zdroj:	Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347).
DOI:	10.1109/eosesd.1998.737034
Popis:	The impact of MOSFET source/drain junction scaling on the ESD robustness of shallow trench isolation (STI)-defined diode structures is shown for the first time. ESD robustness improvements to STI-bound p/sup +/ diodes using germanium preamorphization and deep B11 implants, and polysilicon-bordered ESD networks are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::685939fa9529d423c83ecd9c0676870c https://doi.org/10.1109/eosesd.1998.737034 Zobrazit plný text záznamu