Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application
| Autor: | Tanja Jawinski, Marius Grundmann, Roland Scheer, Holger von Wenckstern, Michael Lorenz |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Doping Vanadium chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention chemistry law 0103 physical sciences Solar cell Optoelectronics Thin film 010306 general physics 0210 nano-technology business Short circuit Indium |
| Zdroj: | 2020 47th IEEE Photovoltaic Specialists Conference (PVSC). |
| Popis: | Indium sulfide hyperdoped with vanadium has been predicted to be a promising material to realize an intermediate band (IB) solar cell. Using co-evaporation of the elements we grew In 2 S 3 :V on (111)-oriented $p$ -Si substrates. As transparent top electrode n-ZnO:Al is used to realize heterostructure $pin$ -solar cells. Investigations of structural properties reveal epitaxial growth independent of the vanadium doping content. We further characterize pin-heterostructure solar cells by current-voltage characteristics in the dark and under illumination. We do not observe an increase of short circuit current density for V-doped samples, which indicates that the IB is fully occupied. |
| Databáze: | OpenAIRE |
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