Formation of microtwins in TmP/GaAs heterostructures

Autor:	Ching-hsi Lin, Laurence P. Sadwick, R. J. Hwu
Rok vydání:	2003
Předmět:	Chemistry Stereochemistry Heterojunction Condensed Matter Physics Crystallographic defect Inorganic Chemistry Crystal Crystallography Transmission electron microscopy Materials Chemistry Macle Thin film Selected area diffraction Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 247:77-83
ISSN:	0022-0248
Popis:	Microtwins in semi-metal thulium phosphide (TmP) epilayers grown on (0 0 1) GaAs substrates by molecular beam epitaxy have been studied by transmission electron microscopy. Selected area diffraction patterns show extra spots along 〈1 1 1〉 and 〈2 2 4〉 corresponding to three times the normal rock-salt periodicity. Only one or two twin variants are found in the crystal. The occurrence of the observed microtwins in the TmP-GaAs heterostructure can be accounted for by the growth-accident mechanism, i.e., the formation of microtwins is via growth accidents in the stacking sequence on {1 1 1} and {1 1 2} planes. The growth accidents appear to occur due to rapid growth rates and/or contamination.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6850657115840804d3ab4cb2acfdcaa8 https://doi.org/10.1016/s0022-0248(02)01947-4 Zobrazit plný text záznamu Full Text from ScienceDirect