Improved InAlGaP-based heterostructure field-effect transistors
| Autor: | Wei-Chou Hsu, Tzong-Bin Wang, Yu-Shyan Lin, Jun-Chin Huang, Dong-Hai Huang, Ke-Hua Su, Ching-Hwa Ho |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Schottky barrier Transconductance Transistor Wide-bandgap semiconductor Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Saturation current Materials Chemistry Optoelectronics Breakdown voltage Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Science and Technology. 21:540-543 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/21/4/021 |
| Popis: | This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the double δ-doped InGaP/InGaAs HFET are superior to those of the previously reported single δ-doped InGaP/InGaAs HFETs. The first n-InAlGaP/GaAs HFET is also investigated because it has a high Schottky barrier, a large high band gap and a large conduction-band discontinuity (ΔEC). Even without indium in the channel of the InAlGaP/GaAs HFET, gm and Imax are as high as 170 mS mm−1 and 410 mA mm−1, respectively. The gm values of these two HFETs remain large even when the gate voltages are positive. Moreover, the breakdown voltages of the two examined HFETs both exceed 40 V. |
| Databáze: | OpenAIRE |
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