Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM

Autor:	Seong-Ook Jung, Hanwool Jeong, Taejoong Song, Tae-Won Kim, Younghwi Yang, Gyu-Hong Kim, Hyo-sig Won
Rok vydání:	2015
Předmět:	Cross coupled Offset (computer science) Negative bit line Computer science Electronic engineering Bit line High density Static random-access memory Energy consumption Electrical and Electronic Engineering Electronic circuit
Zdroj:	IEEE Transactions on Circuits and Systems I: Regular Papers. :1-9
ISSN:	1558-0806 1549-8328
DOI:	10.1109/tcsi.2015.2388837
Popis:	An offset-compensated cross-coupled PFET bit-line (BL) conditioning circuit (OC-CPBC) and a selective negative BL write-assist circuit (SNBL-WA) are proposed for high-density FinFET static RAM (SRAM). The word-line (WL) underdrive read-assist and the negative BL write-assist circuits should be used for the stable operation of high-density FinFET SRAM. However, the WL underdrive read-assist circuit degrades the performance, and the negative BL write-assist circuit consumes a large amount of energy. The OC-CPBC enhances BL development during the evaluation phase by applying cross-coupled PFETs whose offset is compensated by precharging each of the two BLs separately through diode-connected cross-coupled PFETs. The SNBL-WA performs a write assist only when a write failure is detected, and this selective write assist reduces the write energy consumption. The simulation results show that the performance and energy consumption are improved by 41% and 48%, respectively, by applying the OC-CPBC and SNBL-WA to SRAM, even with a decrease in area.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6849811a3e48516882a0b2ac59b6cf7b https://doi.org/10.1109/tcsi.2015.2388837 Zobrazit plný text záznamu