Electron energy-loss spectroscopy analysis of the electronic structure of nitrided Hf silicate films

Autor:	Koji Masuzaki, Makoto Miyamura, Nobuyuki Ikarashi, Toru Tatsumi
Rok vydání:	2004
Předmět:	Materials science Physics and Astronomy (miscellaneous) Band gap Electron energy loss spectroscopy Gate dielectric Analytical chemistry Electronic structure Dielectric Silicate Condensed Matter::Materials Science chemistry.chemical_compound Ion implantation chemistry Spectroscopy
Zdroj:	Applied Physics Letters. 84:3672-3674
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1738948
Popis:	We have shown, using electron energy-loss spectroscopy, that incorporating N into a Hf silicate film reduces the band gap. We also experimentally clarified that the Hf atoms in the film are coordinated by N atoms, and we used ab initio electronic structure calculations to show that the Hf–N coordination can be a cause of the decrease in the band gap. Therefore, when a Hf silicate film is used as a gate dielectric in a metal-oxide-semiconductor field-effect transistor, N incorporation can affect the gate leakage current because the decrease in the band gap lowers the band offsets of the dielectric on Si.
Databáze:	OpenAIRE
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