Facet-dependent electric-field-induced second harmonic generation in silicon and zincblende
| Autor: | P. A. Márquez-Aguilar, Hendradi Hardhienata, Adalberto Alejo-Molina, Kurt Hingerl |
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| Rok vydání: | 2017 |
| Předmět: |
Physics
Matrix representation Nonlinear optics Second-harmonic generation Statistical and Nonlinear Physics Electron Polarization (waves) 01 natural sciences Atomic and Molecular Physics and Optics 010309 optics Electric field Quantum mechanics 0103 physical sciences High harmonic generation Surface second harmonic generation 010306 general physics |
| Zdroj: | Journal of the Optical Society of America B. 34:1107 |
| ISSN: | 1520-8540 0740-3224 |
| DOI: | 10.1364/josab.34.001107 |
| Popis: | We discuss electric-field-induced second harmonic (EFISH) generation for silicon and zincblende facets (001), (011), and (111), employing the full fourth-rank tensor representation of the third-order susceptibility. Then we directly relate these 81 tensor elements with the contracted or Voigt matrix representation. Using group theory, we show that the number of independent elements is only two; however, at different facets, different linear combinations thereof appear. Also, specific expressions for the resulting s- and p-polarized second harmonic polarization are given for incident s- and p-polarizations, for the first time explaining the facet and angle of incidence dependence of EFISH. Finally, a classical oscillator model is used to explain the response of the electrons and the material combined with a direct physical interpretation of the breaking of the symmetry and thus the deformation of the electronic charge density along the bonds. Through this model we propose a connection between the strength parameter b for third harmonic generation and the second harmonic signal originated by EFISH mechanism. |
| Databáze: | OpenAIRE |
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