Epitaxial growth of Ti3SiC2 thin films with basal planes parallel or orthogonal to the surface on α-SiC

Autor:	Thierry Cabioc’h, M. Alkazaz, A. Drevin-Bazin, Marie-France Beaufort, J. F. Barbot
Rok vydání:	2012
Předmět:	Diffraction Crystallography Materials science Physics and Astronomy (miscellaneous) Annealing (metallurgy) Transmission electron microscopy X-ray crystallography Composite material Thin film Sputter deposition Epitaxy Ohmic contact
Zdroj:	Applied Physics Letters. 101:021606
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4737018
Popis:	The growth of Ti3SiC2 thin films were studied onto α-SiC substrates differently oriented by thermal annealing of TiAl layers deposited by magnetron sputtering. For any substrate’s orientation, transmission electron microscopy coupled with x-ray diffraction showed the coherent epitaxial growth of Ti3SiC2 films along basal planes of SiC. Specifically for the (112¯0) 4H-SiC, Ti3SiC2 basal planes are found to be orthogonal to the surface. The continuous or textured nature of Ti3SiC2 films does not depend of the SiC stacking sequence and is explained by a step-flow mechanism of growth mode. The ohmic character of the contact was confirmed by current-voltage measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::682b1fc702e96bf7c6e866cc87d80354 https://doi.org/10.1063/1.4737018 Zobrazit plný text záznamu