Ir–Zr alloys as diffusion barriers between Cu and Si(100)
Autor: | C. M. Gilmore, D. E. Ramaker, H. Yang |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1454-1457 |
ISSN: | 1520-8559 0734-2101 |
DOI: | 10.1116/1.578683 |
Popis: | Various Ir–Zr alloys were studied to determine their effectiveness in high temperature applications as diffusion barriers at a Cu/Si interface. Samples were characterized with x‐ray diffraction, Auger electron spectroscopy, Rutherford backscattering spectroscopy, and resistivity measurements. An amorphous Ir0.84Zr alloy was found to be a more effective diffusion barrier than a polycrystalline Ir2.85Zr alloy, indicating that grain boundary diffusion dominates in the Ir2.85Zr film. The films, typically about 3000 A thick, were found to serve as effective diffusion barriers for temperatures up to about 800 °C. The diffusion constants were determined at various temperatures, and the activation energy for Si out‐diffusion in Cu/Ir0.84Zr/Si was also obtained. |
Databáze: | OpenAIRE |
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