| Autor: |
Alex L. Flamholz, R. H. Fair, A. C. Chen, D. A. Heald, Robert P. Rippstein, R. J. Amodeo |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2476 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.589670 |
| Popis: |
The 180 nm ground rule production prototype x-ray lithography aligner was developed for the Defense Advanced Lithography Program (DALP) and installed in IBM’s Advanced Lithography Facility (ALF) in 1995. This aligner is designed to satisfy the manufacturing requirement for 250 and 180 nm ground rule electronic devices, such as 256 Mbit and 1 Gbit dynamic random access memories. The acceptance evaluation of this aligner was presented elsewhere (Ref. 12). The aligner uses an innovative x-ray image sensor (XRIS) to align the mask by detecting its x-ray actinic image and uses an off-axis alignment system, similar to the alignment system used in Micrascan-II™ (a trademark of Silicon Valley Group Lithography), to align the wafer. From subsystem testing, the alignment repeatability of XRIS is not a significant contributor to the aligner’s contribution of overlay error. As a result, the x-ray alignment sensor technology can be used for future generations of x-ray lithography aligners. This article will specifical... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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