New investigation on the physical and electrochemical properties of (TAS) thin films grown by electrodeposition technique
| Autor: | F. Tlig, M. Gannouni, I. Ben Assaker, Radhouane Chtourou |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Chemistry Scanning electron microscope General Chemical Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Indium tin oxide Dielectric spectroscopy 0103 physical sciences Direct and indirect band gaps Cyclic voltammetry Thin film 0210 nano-technology Tin Ternary operation |
| Zdroj: | Journal of Photochemistry and Photobiology A: Chemistry. 335:26-35 |
| ISSN: | 1010-6030 |
| Popis: | The purpose of this work was to develop a new method on the synthesis of ternary tin antimony sulfide (TAS) thin films on indium tin oxide (ITO) coated glass substrates using one-step electrodeposition route. To explore the mechanism behind, a cyclic voltammetric study was performed in unitary (Sn, Sb, S) systems, binaries (Sn-S, Sb-S) systems, and ternary Sn-Sb-S system. The effect of various deposition potentials (E dep ) on the structural, optical and morphological properties, as well as frequency response has been investigated by X-ray diffraction patterns, UV–vis spectroscopy, scanning electron microscope (SEM), and electrochemical impedance spectroscopy (EIS). From these results, X-ray diffraction demonstrates that the major crystalline phase of the SnSb 2 S 4 orthorhombic phase has been obtained at E dep = −0.7 V (vs. Ag/AgCl). Based on the (SEM) images, it was found that the surface morphology and grain size were strongly influenced by the deposition potential. According to optical measurements, the (TAS) thin films display good optical properties with direct band gap. An equivalent electric circuit model (EECM) is designed for (EIS) data. The fitting curves are aligned well with the experimental curves, suggesting that the proposed equivalent circuit model is an ideal model for (TAS) electrode. |
| Databáze: | OpenAIRE |
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