Transient forward bias switching behaviour of amorphous pin diodes
| Autor: | Norbert Bernhard, Gert Schmid, Markus B. Schubert |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon business.industry PIN diode chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Amorphous solid Optics chemistry law Solar cell Materials Chemistry Ceramics and Composites Transient (oscillation) Electric current Current (fluid) business Degradation (telecommunications) |
| Zdroj: | Journal of Non-Crystalline Solids. :206-209 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(95)00683-4 |
| Popis: | The switching-on behaviour of amorphous hydrogenated silicon (a-Si:H) based pin diodes under the application of a forward bias step-like voltage pulse was investigated. The characteristic transients of the electric current were recorded in dependence on the pulse height of applied forward bias, its repetition rate, an additional illumination bias, and finally on the degradation state of the samples and also on the spatial distribution of defects created by light soaking. The effect of these parameters was compared for thick (between 2 and 5 μm) samples and those with thicknesses relevant for solar cell applications. In the first 50 ns a resemblance of the current transients with those from nin devices was found. A qualitative consistent explanation of the observed experimental phenomenology is given which will be supported by the determination of the temperature dependent activation of the speed of the delayed current rise. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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