Low-temperature preparation of flexible a-Si:H solar cells with hydrogenated nanocrystalline silicon p layer

Autor:	Dexian Zhang, Yanpin Sui, Yun Sun, Hongkun Cai, Jin Wang, Yi Zhang, Ke Tao
Rok vydání:	2012
Předmět:	Amorphous silicon Materials science Dopant Analytical chemistry Nanocrystalline silicon Conductivity Condensed Matter Physics Silane Surfaces Coatings and Films chemistry.chemical_compound chemistry Thin film Polyethylene naphthalate Instrumentation Layer (electronics)
Zdroj:	Vacuum. 86:1477-1481
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2012.01.011
Popis:	In this paper we report on flexible a-Si:H solar cells prepared on polyethylene naphthalate (PEN) substrates using p-type hydrogenated nanocrystalline silicon thin films (p-nc-Si:H) as the window layer. The p-nc-Si:H films were prepared at low temperature (150 °C) using trimethylboron (TMB) as a dopant gas. The influence of the silane concentration (SC) on the electrical and structural properties of ultra-thin p-nc-Si:H as well as the performance of solar cells on PEN was investigated. The results show that the crystalline fraction and conductivity of p-nc-Si:H thin films diminished, while the deposition rate and RMS roughness of films increased, when the SC increases from 0.53% to 0.8%. For the a-Si:H solar cells on PEN with the non-textured electrodes, the best efficiency of 6.3% was achieved with the p-nc-Si:H thin films deposited at SC = 0.67%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::681da3a492f8034a0dc59a432484ccdd https://doi.org/10.1016/j.vacuum.2012.01.011 Zobrazit plný text záznamu Full Text from ScienceDirect