Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy
| Autor: | K. Bandy, Michael J. MacDonald, Brown Jeffrey, R. Krishnasamy, Jochonia Nxumalo, D. Ioannou, John Bruley, Ahmad Katnani |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation Hydrogen Dopant Scanning electron microscope business.industry chemistry.chemical_element Scanning capacitance microscopy 01 natural sciences Electron holography chemistry 0103 physical sciences Optoelectronics Field-effect transistor 010306 general physics business Hot-carrier injection |
| Zdroj: | Applied Physics Letters. 112:233502 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5009243 |
| Popis: | The effect of hot carrier injection on the FET's junction properties has been investigated for CMOS NFET devices. Junction profiles and carrier concentration of stressed and unstressed devices are measured and compared by dual lens electron holography and scanning capacitance microscopy, respectively. The measurements reveal that the width of the junction on the drain side of the device that undergoes hot carrier stressing decreases, indicating a reduction in active carrier concentration. These results are consistent with the hypothesis of phosphorous dopant passivation by the hot carrier induced release of hydrogen into the drain side extension region. |
| Databáze: | OpenAIRE |
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