High Throughput Inline Process for Deep Phosphorus Emitters

Autor: Blendin, G., Faber, M., Horzel, J., Boubekeur, H., Metz, A.
Jazyk: angličtina
Rok vydání: 2011
Předmět:
DOI: 10.4229/26theupvsec2011-2bv.1.48
Popis: 26th European Photovoltaic Solar Energy Conference and Exhibition; 1372-1376
In this paper we show that the high throughput inline diffusion process developed by SCHOTT Solar offers the possibility to realize phosphorous diffusion drive-in times up to 100 min with a throughput of more than 3200 Wafer/h with only one equipment set. The temperature and time profiles of the drive-in diffusion have been varied in a wide range for this inline diffusion process. On multicrystalline material solar cell results show an efficiency gain of 0.35% abs. compared to the shortest studied diffusion profile of the experiment. The improvement can be attributed to higher open-circuit voltage Voc and higher fill factor FF. The higher Voc values are due to the optimized emitter profile caused by the longer diffusion duration at lower temperature. The higher FF can be explained by the higher pseudo fill factor pFF values which are caused by the higher depth of the profile. A minimum depth of Phosphorous profile is needed to prevent impurities of the Ag paste penetrating into the space charge region and reducing the FF and pFF. We show results that the minimal depth of the emitter differs for two tested Ag pastes.
Databáze: OpenAIRE