He‐plasma assisted epitaxy for highly resistive, optically fast InP‐based materials

Autor:	B.J. Robinson, Li Qian, S. D. Benjamin, D.A. Thompson, Peter W. E. Smith, D. B. Mitchell
Rok vydání:	1996
Předmět:	Resistive touchscreen Wavelength Materials science Physics and Astronomy (miscellaneous) Electrical resistivity and conductivity Analytical chemistry Plasma Epitaxy Electron cyclotron resonance Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 69:509-511
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.117769
Popis:	InP and related quaternaries (InGaAsP) have been grown by conventional gas source molecular beam epitaxy while simultaneously exposing the growth surface to a He plasma stream generated by electron cyclotron resonance. For growth temperatures from 400 to 450 °C, the InP produced by this process displays greatly increased resistivity, as high as 105 Ω cm, compared to growth without plasma where resistivities are typically less than 1 Ω cm. An InGaAsP quaternary, with band‐gap wavelength of 1.55 μm, grown with the plasma displays a sharp band edge and fast photoresponse (15 ps).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68139f73d6fbe75c4b1208a4baef31d9 https://doi.org/10.1063/1.117769 Zobrazit plný text záznamu