A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT

Autor:	Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Rok vydání:	2008
Předmět:	chemistry.chemical_compound Materials science CMOS chemistry business.industry Heterojunction bipolar transistor Electrical engineering Bicmos integrated circuits business Bicmos technology Active devices Silicon-germanium
Zdroj:	2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
DOI:	10.1109/bipol.2008.4662721
Popis:	For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::680dcea7dc29df2e8835d3376d5fc255 https://doi.org/10.1109/bipol.2008.4662721 Zobrazit plný text záznamu