Reflectance anisotropy spectroscopy and the growth of low-dimensional materials

Autor:	Zbigniew Sobiesierski, David I. Westwood
Rok vydání:	1998
Předmět:	Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Heterojunction Surfaces and Interfaces Activation energy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Quantum dot Materials Chemistry Spectroscopy Vicinal Quantum well Molecular beam epitaxy
Zdroj:	Thin Solid Films. 318:140-147
ISSN:	0040-6090
DOI:	10.1016/s0040-6090(97)01153-x
Popis:	Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surface reconstruction and ultrathin coverages of material on semiconductor surfaces. This in situ technique therefore lends itself to monitoring the formation of low-dimensional systems in a wide range of growth environments. The following systems have been studied under molecular beam epitaxy (MBE) conditions: (i) the deposition of sub-monolayer coverages of Si, to form Si δ-layers within GaAs; (ii) the As/P exchange reaction which leads to the formation of InAs surface quantum wells on the InP(001) surface; (iii) the self-organised growth of InAs quantum dots via strain relaxation of ultrathin layers (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::67fe1f847e843d947c83497d0d006b4d https://doi.org/10.1016/s0040-6090(97)01153-x Zobrazit plný text záznamu Full Text from ScienceDirect