Examination of electrical and optical properties of Zn1−xMgxO:Al fabricated by radio frequency magnetron co-sputtering
Autor: | Takashi Minemoto, Jakapan Chantana, Yuya Ishino, Koki Kawabata |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Band gap Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces Crystal structure 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Sputtering 0103 physical sciences Materials Chemistry Crystallite Thin film Free carrier absorption 0210 nano-technology Transparent conducting film |
Zdroj: | Thin Solid Films. 646:105-111 |
ISSN: | 0040-6090 |
Popis: | ZnO:Al is widely used as transparent conductive oxide (TCO) layer in several electronic and optical devices. To widen bandgap energy (Eg) of ZnO:Al, Mg was introduced to form Zn1 − xMgxO:Al. In this work, the Zn1 − xMgxO:Al films with different [Mg] / ([Mg] + [Zn]) ratios (Mg content (x)) on soda-lime glasses and polycrystalline Cu(In,Ga)Se2 thin films were prepared by radio frequency magnetron co-sputtering of ZnO:Al and MgO targets. The power density applied to ZnO:Al target was constant at 144.3 W/cm2, whereas that applied to MgO target is varied from 0 to 183.7 W/cm2 to change the [Mg] / ([Mg] + [Zn]) ratio from 0 to 0.205. It is demonstrated that Eg of the Zn1 − xMgxO:Al is increased with the [Mg] / ([Mg] + [Zn]) from 0 to 0.205, while the basic crystal structure is ZnO. The Zn1 − xMgxO:Al films with small [Mg] / ([Mg] + [Zn]) ratios of approximately 0.064–0.139 possess the better film quality and higher Hall mobility than those of ZnO:Al since their crystalline diameters are enhanced with the decreased deep-defect levels. With the small [Mg] / ([Mg] + [Zn]) up to 0.139, the carrier concentration is decreased, which is beneficial to lower the free carrier absorption, while the resistivity is kept low. Consequently, the Zn1 − xMgxO:Al films with the small [Mg] / ([Mg] + [Zn]) ratio (about 0.064–0.139) are promisingly utilized as TCO layer. |
Databáze: | OpenAIRE |
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