Reliability enhancement in high-performance MOSFETs by annular transistor design

Autor:	D.C. Mayer, E.E. King, R.C. Lacoe, Jon V. Osborn
Rok vydání:	2004
Předmět:	Nuclear and High Energy Physics Transistor design Materials science business.industry Electrical engineering Radiation Nuclear Energy and Engineering CMOS Electric field MOSFET Optoelectronics Electrical and Electronic Engineering Mosfet circuits business Saturation (magnetic) Electronic circuit
Zdroj:	IEEE Transactions on Nuclear Science. 51:3615-3620
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2004.839157
Popis:	The use of annular MOSFET design, which has demonstrated total-dose radiation immunity in CMOS circuits, can improve the hot-carrier reliability of CMOS circuits by reducing the drain electric field compared to conventionally designed MOSFETs. A theoretical analysis of the annular n-MOSFET in saturation verifies the reduction of the drain electric field in properly designed MOSFETs. Hot-carrier data for an enclosed 0.25-/spl mu/m n-MOSFET demonstrate an improvement in hot-carrier lifetime by more than 3x compared to a conventional device in the same technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::67e7b156a6f3740646ea5b236755cc74 https://doi.org/10.1109/tns.2004.839157 Zobrazit plný text záznamu