Bulk micromachining of SiC substrate for MEMS sensor applications
| Autor: | M. Vallo, Gabriel Vanko, P. Hudek, Johann Zehetner, Tibor Lalinský, P. Choleva, J. Dzuba, Vladimír Kutiš, Ivan Rýger |
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| Rok vydání: | 2013 |
| Předmět: |
Bulk micromachining
Materials science Laser ablation Fabrication business.industry Transistor Mems sensors Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Sic substrate Femtosecond Deep reactive-ion etching Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 110:260-264 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2013.01.046 |
| Popis: | We present a non-conventional bulk micromachining process of SiC substrate directed to fabrication of MEMS sensors based on III-nitrides (III-N) material systems for harsh environment. They consist of AlGaN/GaN/SiC high electron mobility transistors (HEMTs). The key issue is here the creation of appropriate diaphragms necessary to verify the multi-sensing properties of such MEMS sensors. The backside of the SiC substrate must be selectively removed in the defined areas. Considering the extremely high chemical stability of SiC, for the deep patterning we propose a method which uses femtosecond (FS) laser ablation combined with deep reactive ion etching (DRIE). The different writing strategies in order to improve the texturing of SiC are also discussed. Electrical parameters comparison of the fabricated devices on both Si and SiC substrates were performed. Four times higher values of maxima of drain current for HEMTs on AlGaN/GaN/SiC were measured. |
| Databáze: | OpenAIRE |
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