| Popis: |
Thanks to the European Projects SEA‐NET and PULLNANO, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra‐Shallow Junctions for 45 and 32 nm CMOS on 200 and 300 mm wafers. In this paper, we present the main machine characteristics (layout, contamination, homogeneity, reproducibility, uptime) and we show that implanted wafers are compatible with the 32 nm nodes requirements. Then doping results (sheet resistance vs junction depth and leakage current) using several annealing technics are presented (laser, flash and spike anneals). In the second part of the paper, versatility of the tool is demonstrated with its use for other applications (3D doping, hydrogenation, solar cells…) |
