High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs
| Autor: | Hsien-Chin Chiu, Chih-Wei Yang, Jen-Inn Chyi, Chian-Sern Chang, Yue-Ming Hsin, Hsiang-Chun Wang, Chang-Luen Wu |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Transistor Wide-bandgap semiconductor Gallium nitride Substrate (electronics) High-electron-mobility transistor Electronic Optical and Magnetic Materials law.invention Surface micromachining chemistry.chemical_compound chemistry law Optoelectronics Breakdown voltage Electrical and Electronic Engineering Safety Risk Reliability and Quality business Layer (electronics) |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 14:726-731 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2014.2317001 |
| Popis: | This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm $\hbox{SiO}_{2}$ and a 20- $\mu\hbox{m}$ copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously developed full substrate removal methods is eliminated. The need for complicated substrate-transfer technology is also eliminated, increasing chip package yield. The low frequency noise measurement results also demonstrate that the trap density of the buffer/transition layer is reduced by the removal of the substrate and micromachining of the HEMTs. |
| Databáze: | OpenAIRE |
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