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Chemical vapor deposition (CVD) performed in rapid thermal processing (RTP) chambers, also referred to as rapid thermal chemical vapor deposition (RTCVD), has been demonstrated for a wide range of typical microelectronics manufacturing processes [1], including growth of silicon [2], silicon oxide [3], and silicon nitride [4], as well as new processes, such as the growth of silicon germanium alloys [5]. These CVD systems share common features of gas-phase and surface reactions combined with fluid flow, heat transfer, and chemical species transport (cf. Figure 1). |
