On–Off Charge–Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
| Autor: | Wei Wang, Hanping Chen, Shih-Hsien Lo, Yuan Taur, Clement Hsingjen Wann |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed matter physics Dopant business.industry Doping Electrical engineering Semiconductor device modeling Charge (physics) Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Threshold voltage Computer Science::Hardware Architecture Logic gate MOSFET Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 59:863-866 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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