AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability
| Autor: | Kazuhiro Nagase, Ichiro Shibasaki, Masaru Ozaki, S. Miya, A. Ichii, Tatsuro Iwabuchi, Naohiro Kuze, S. Muramatsu |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Condensed matter physics Solid-state physics business.industry Transistor Electron Quaternary compound Condensed Matter Physics Buffer (optical fiber) Electronic Optical and Magnetic Materials law.invention law Lattice (order) Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Journal of Electronic Materials. 25:415-420 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm2/Vs and extrinsic effective electron velocity of 2.2 x 107 cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs. |
| Databáze: | OpenAIRE |
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