Analyzing the effects of boron transient enhanced diffusion on low frequency noise in NMOSFETs

Autor:	Yusuke Okuaki, Tsutomu Miyazaki, Toshiro Sakamoto, Shuntaro Fujii, Isao Maru, Tomohiko Chiaki, Tatsushi Yagi, Shohei Hamada, Atsushi Okamoto
Rok vydání:	2017
Předmět:	010302 applied physics Materials science Dopant Silicon business.industry Infrasound chemistry.chemical_element 01 natural sciences chemistry 0103 physical sciences MOSFET Electronic engineering Optoelectronics Transient (oscillation) Diffusion (business) Boron business
Zdroj:	2017 IEEE International Reliability Physics Symposium (IRPS).
DOI:	10.1109/irps.2017.7936417
Popis:	The effects of boron transient enhanced diffusion (TED) on low frequency noise (LFN) in NMOSFETs have been experimentally investigated by focusing on reverse short channel characteristics and on boron re-distribution by interstitial Si atoms. For the first time, it was found that higher dopant concentration regions formed by boron TED degrade LFN.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::67cb522b6bf4af01d4975614714bc114 https://doi.org/10.1109/irps.2017.7936417 Zobrazit plný text záznamu