High resolution x-ray diffraction analyses of GaN/LiGaO2

Autor:	R J Matyi, April S. Brown, William A. Doolittle
Rok vydání:	1999
Předmět:	Diffraction Acoustics and Ultrasonics business.industry Chemistry Streak Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystal Reciprocal lattice Reflection (mathematics) Optics business Molecular beam epitaxy
Zdroj:	Journal of Physics D: Applied Physics. 32:A61-A64
ISSN:	1361-6463 0022-3727
DOI:	10.1088/0022-3727/32/10a/313
Popis:	Lithium gallate (LiGaO2) is gaining increasing attention as a potential substrate for the growth of the important semiconductor GaN. In order to better understand this material we have performed high-resolution double- and triple-axis x-ray diffraction analyses of both the starting LiGaO2 and GaN/LiGaO2 following epitaxial growth. A high-resolution triple-axis reciprocal space map of the substrate showed a sharp, well-defined crystal truncation rod and a symmetric streak of intensity perpendicular to q002, suggesting high structural quality with mosaic spread. Triple-axis scans following GaN growth showed (1) the development of isotropic diffuse scatter around the LiGaO2 (002) reflection, (2) the presence of a semi-continuous intensity streak between the LiGaO2 (002) and GaN (0002) reflections, and (3) a compact pattern of diffuse scatter around the GaN (0002) reflection that becomes increasingly anisotropic as the growth temperature is increased. These results suggest that LiGaO2 permits the epitaxial growth of GaN with structural quality that may be superior to that observed when growth is performed on SiC or Al2O3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::67cb29b5546090d8dc21cb07703178a9 https://doi.org/10.1088/0022-3727/32/10a/313 Zobrazit plný text záznamu